Search results for "Intrinsic semiconductor"

showing 4 items of 4 documents

Molecular semiconductor-doped insulator (MSDI) heterojunctions: Oligothiophene/bisphtalocyanine (LuPc2) and perylene/bisphthalocyanine as new structu…

2010

Abstract The combination of a sexithiophene and a perylene diimide derivatives, as p-type and n-type materials, respectively, used as sub-layers, to an intrinsic semiconductor, namely the lutetium bisphthalocyanine, allows to obtain a new transducer for gas sensing. These transducers were called molecular semiconductor-doped insulator (MSDI) heterojunctions, were recently designed and reported, but with only phthalocyanines as active materials. p-Type material leads to MSDIs that exhibit a positive response to ozone and a negative response to ammonia, whereas MSDIs prepared from n-type material exhibit a positive response to ammonia and negative response to ozone. The remarkable point is th…

Materials scienceIntrinsic semiconductorbusiness.industryDopingMetals and Alloyschemistry.chemical_elementHeterojunctionInsulator (electricity)Condensed Matter PhysicsLutetiumSurfaces Coatings and FilmsElectronic Optical and Magnetic Materialschemistry.chemical_compoundTransducerchemistryDiimideMaterials ChemistryOptoelectronicsElectrical and Electronic EngineeringbusinessInstrumentationPeryleneSensors and Actuators B: Chemical
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Phonon Scattering through a Local Anisotropic Structural Disorder in the Thermoelectric Solid Solution Cu_2Zn_(1−x)Fe_xGeSe_4

2013

Inspired by the promising thermoelectric properties of chalcopyrite-like quaternary chalcogenides, here we describe the synthesis and characterization of the solid solution Cu(2)Zn(1-x)Fe(x)GeSe(4). Upon substitution of Zn with the isoelectronic Fe, no charge carriers are introduced in these intrinsic semiconductors. However, a change in lattice parameters, expressed in an elongation of the c/a lattice parameter ratio with minimal change in unit cell volume, reveals the existence of a three-stage cation restructuring process of Cu, Zn, and Fe. The resulting local anisotropic structural disorder leads to phonon scattering not normally observed, resulting in an effective approach to reduce th…

Condensed matter physicsPhonon scatteringChemistryIntrinsic semiconductorGeneral ChemistryBiochemistryCatalysisCondensed Matter::Materials ScienceColloid and Surface ChemistryLattice constantLattice (order)Thermoelectric effectCharge carrierAnisotropySolid solution
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Alkylthio-tetrasubstituted μ-Nitrido Diiron Phthalocyanines: Spectroelectrochemistry, Electrical Properties, and Heterojunctions for Ammonia Sensing.

2020

Alkylthio-tetrasubstituted μ-nitrido diiron phthalocyanine complexes are synthesized with n-butyl, iso-butyl, tert-butyl, and n-hexadecyl alkyl moieties. For the first time, a spectroelectrochemical investigation of μ-nitrido diiron phthalocyanines is achieved at all the redox steps. The complexes are stable in all their redox states, unlike their unsubstituted analogues. The interest of the present complexes is to prepare sensing devices by a solution processing method. Films are characterized by electronic absorption and Raman spectroscopies. Electrical measurements on resistors show the highly resistive behavior of these complexes, whatever the chain length. However, when combined with t…

heterojunctionchemistry.chemical_element010402 general chemistryPhotochemistry01 natural sciencesRedoxammoniagas sensorInorganic Chemistrychemistry.chemical_compoundsymbols.namesake[CHIM]Chemical SciencesElectrical measurementsconductometric transducerPhysical and Theoretical Chemistrymolecular materialsAlkylComputingMilieux_MISCELLANEOUSchemistry.chemical_classification010405 organic chemistryIntrinsic semiconductorHeterojunctionLutetium0104 chemical sciencesphthalocyaninechemistryPhthalocyaninesymbolsRaman spectroscopyInorganic chemistry
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Surface band-gap narrowing in quantized electron accumulation layers.

2010

An energy gap between the valence and the conduction band is the defining property of a semiconductor, and the gap size plays a crucial role in the design of semiconductor devices. We show that the presence of a two-dimensional electron gas near to the surface of a semiconductor can significantly alter the size of its band gap through many-body effects caused by its high electron density, resulting in a surface band gap that is much smaller than that in the bulk. Apart from reconciling a number of disparate previous experimental findings, the results suggest an entirely new route to spatially inhomogeneous band-gap engineering.

Materials scienceCondensed matter physicsIntrinsic semiconductorBand gapKondo insulatorGeneral Physics and AstronomyMetal-induced gap statesDirect and indirect band gapsElectron holeSemimetalQuasi Fermi level
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